An analytical hot-carrier induced degradation model in polysilicon TFTs

Author

Hatzopoulos, Argyrios T. ; Tassis, Dimitrios H. ; Hastas, Nikolaos A. ; Dimitriadis, Charalabos A. ; Kamarinos, George

Author_Institution

Dept. of Phys., Univ. of Thessaloniki, Greece

Volume

52

Issue

10

fYear

2005

Firstpage

2182

Lastpage

2187

Abstract

Hot-carrier effects in n-channel polysilicon thin-film transistors (TFTs), with channel width W=10 μm and length L=10 μm, are investigated. An analytical model predicting the post-stress performance is presented, by treating the channel of the stressed device as a series combination of a damaged region extended over a length ΔL beside the drain and a region of length L-ΔL having the properties of the unstressed device. The apparent channel mobility is derived considering that the mobility of the damaged region is described with the mobility of amorphous Si TFTs, whereas the mobility of the undamaged region is described with the mobility of the virgin device. From the evolution of the static characteristics during stress, the properties of the damaged region with stress time are investigated.

Keywords

electron mobility; hot carriers; semiconductor device models; thin film transistors; 10 micron; amorphous Si TFT; analytical model; channel mobility; damaged region; hot-carrier effects; hot-carrier induced degradation; polysilicon TFT; post-stress performance; static characteristics; stressed device; thin-film transistors; Crystallization; Degradation; Electrons; Glass; Grain boundaries; Grain size; Hot carriers; Stress; Substrates; Thin film transistors; Estimation of damaged region; hot carriers; polysilicon thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.856178

Filename

1510907