Effect of nonuniform carrier distribution on average resistivity: Case of polysilicon grains

Author

Sputai, S.V.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2014

fDate

2-4 Oct. 2014

Firstpage

143

Lastpage

145

Abstract

Grain boundaries of polycrystalline semiconductor film trap free carriers creating space charge regions. The length of the depleted regions depends on the trapping states density and free carriers concentration within the grains. As the carrier concentration within depletion region is lower the resistance there can is higher than in the rest of the grain. It is shown that the average concentration of free carriers and specific resistivity can be significantly different from that obtained for the case of uniform free carrier distribution in the grain.

Keywords

carrier density; electrical resistivity; electron traps; elemental semiconductors; grain boundaries; hole traps; semiconductor thin films; silicon; Si; average resistivity; depletion region; free carriers concentration; grain boundaries; nonuniform carrier distribution; polycrystalline semiconductor film; polysilicon grains; trapping states; Abstracts; Conductivity; Educational institutions; Grain boundaries; Silicon; Space charge; averaging; crystallite; grain; grain boundary; polycrystalline silicon; resistivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4799-6019-4

Type

conf

DOI

10.1109/APEIE.2014.7040858

Filename

7040858