Title :
Effect of nonuniform carrier distribution on average resistivity: Case of polysilicon grains
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
Grain boundaries of polycrystalline semiconductor film trap free carriers creating space charge regions. The length of the depleted regions depends on the trapping states density and free carriers concentration within the grains. As the carrier concentration within depletion region is lower the resistance there can is higher than in the rest of the grain. It is shown that the average concentration of free carriers and specific resistivity can be significantly different from that obtained for the case of uniform free carrier distribution in the grain.
Keywords :
carrier density; electrical resistivity; electron traps; elemental semiconductors; grain boundaries; hole traps; semiconductor thin films; silicon; Si; average resistivity; depletion region; free carriers concentration; grain boundaries; nonuniform carrier distribution; polycrystalline semiconductor film; polysilicon grains; trapping states; Abstracts; Conductivity; Educational institutions; Grain boundaries; Silicon; Space charge; averaging; crystallite; grain; grain boundary; polycrystalline silicon; resistivity;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-6019-4
DOI :
10.1109/APEIE.2014.7040858
