A ferroelectric associative memory technology employing heterogate FGMOS structure

Author

Kobayashi, Daisuke ; Shibata, Tadashi ; Fujimori, Yoshikazu ; Nakamura, Takashi ; Takasu, Hidemi

Author_Institution

Dept. of Spacecraft Eng., Japan Aerosp. Exploration Agency, Kanagawa, Japan

Volume

52

Issue

10

fYear

2005

Firstpage

2188

Lastpage

2197

Abstract

A ferroelectric associative memory technology has been developed using ferroelectric materials as a means of storing template vector information. In order to accommodate the ferroelectric memory cell to associative processing circuits, a heterogate floating-gate MOS structure has been developed. As a result, nondestructive reading of analog data written in the ferroelectric film has been made possible, allowing a wide voltage range of input signals to associative processing circuits. The concept has been experimentally verified using fabricated test devices and circuits.

Keywords

MIS structures; content-addressable storage; ferroelectric storage; ferroelectric thin films; nondestructive readout; analog data reading; analog very large scale integration; associative processing circuits; ferroelectric associative memory technology; ferroelectric film; ferroelectric materials; ferroelectric memory cell; floating gate MOS; heterogate FGMOS structure; heterogate floating-gate MOS structure; neuron MOS; nondestructive reading; template matching; vector quantization; Associative memory; Associative processing; Circuit testing; Ferroelectric films; Ferroelectric materials; Information processing; Large scale integration; Nonvolatile memory; Very large scale integration; Voltage; Analog very large-scale integration (VLSI); associative memories; ferroelectric memories; floating-gate (FG) MOS; neuron MOS; template matching; vector quantization;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.856188

Filename

1510908