Title :
Effect of material inhomogeneity on the open-circuit voltage of string ribbon Si solar cells
Author :
Nakayashiki, Kenta ; Meemongkolkiat, Vichai ; Rohatgi, Ajeet
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The effect of material inhomogeneity on open-circuit voltage (VOC) of string ribbon Si solar cells is investigated by a combination of experimental results and a simple analytical model. Light beam-induced current (LBIC) measurements showed that a cell with no detectable defective region gave an efficiency of 15.9% with a VOC of 616 mV. However, a neighboring cell with highly defective regions covering 38% of its area, as determined by LBIC measurements, gave an efficiency of 14.1% with VOC of 578 mV. Another cell with 19% highly defective regions gave an efficiency of 15.0% with VOC of 592 mV. A simple and approximate analytical model was developed to quantify the loss in VOC on the basis of recombination intensity and the area fraction of defective regions. This model showed that the majority of the loss in VOC is associated with the most defective region, even if its area fraction is relatively small.
Keywords :
OBIC; elemental semiconductors; semiconductor device models; silicon; solar cells; 578 mV; 592 mV; 616 mV; LBIC measurements; Si; effective diffusion length; light beam-induced current measurements; material inhomogeneity; open-circuit voltage; recombination intensity; saturation current density; semiconductor device models; string ribbon silicon solar cells; Analytical models; Charge carrier lifetime; Costs; Crystalline materials; Crystallization; Fabrication; Gettering; Impurities; Photovoltaic cells; Voltage; Effective diffusion length; multicrystalline Si (mc-Si); saturation current density;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.856789