DocumentCode :
1170763
Title :
Reduction of emitter thickness in AlGaAs/GaAs heterojunction bipolar transistor
Author :
Tadayon, S. ; Tadayon, B. ; Tasker, P.J. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Volume :
25
Issue :
12
fYear :
1989
fDate :
6/8/1989 12:00:00 AM
Firstpage :
802
Lastpage :
803
Abstract :
The effects of AlGaAs layer thickness and GaAs cap layer thickness in the emitter of abrupt npn AlGaAs/GaAs heterojunction bipolar transistors on the performance of devices were investigated experimentally. It was found that only 500 AA of Al0.25Ga0.75As layer in the emitter is enough to produce high injection efficiency and a small signal current gain of more than 1100.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; 500 A; Al 0.25Ga 0.75As layer; AlGaAs layer thickness; AlGaAs-GaAs; GaAs cap layer thickness; abrupt npn AlGaAs/GaAs HBT; emitter thickness; heterojunction bipolar transistor; injection efficiency; performance; small signal current gain;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890541
Filename :
31909
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1170763
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