• DocumentCode
    1170763
  • Title

    Reduction of emitter thickness in AlGaAs/GaAs heterojunction bipolar transistor

  • Author

    Tadayon, S. ; Tadayon, B. ; Tasker, P.J. ; Schaff, W.J. ; Eastman, L.F.

  • Author_Institution
    Cornell Univ., Ithaca, NY, USA
  • Volume
    25
  • Issue
    12
  • fYear
    1989
  • fDate
    6/8/1989 12:00:00 AM
  • Firstpage
    802
  • Lastpage
    803
  • Abstract
    The effects of AlGaAs layer thickness and GaAs cap layer thickness in the emitter of abrupt npn AlGaAs/GaAs heterojunction bipolar transistors on the performance of devices were investigated experimentally. It was found that only 500 AA of Al0.25Ga0.75As layer in the emitter is enough to produce high injection efficiency and a small signal current gain of more than 1100.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; 500 A; Al 0.25Ga 0.75As layer; AlGaAs layer thickness; AlGaAs-GaAs; GaAs cap layer thickness; abrupt npn AlGaAs/GaAs HBT; emitter thickness; heterojunction bipolar transistor; injection efficiency; performance; small signal current gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890541
  • Filename
    31909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1170763