DocumentCode :
1170781
Title :
EEPROM synapses exhibiting pseudo-Hebbian plasticity
Author :
Card, H.C. ; Moore, W.R.
Author_Institution :
Oxford Univ., UK
Volume :
25
Issue :
12
fYear :
1989
fDate :
6/8/1989 12:00:00 AM
Firstpage :
805
Lastpage :
806
Abstract :
Dynamic analogue learning in VLSI neural networks can be achieved with low synaptic complexity using EEPROM devices of the floating gate tunnel oxide type. When logarithmic neural voltages are employed, learning algorithms describing synaptic plasticity that approximate multiplicative Hebbian learning rules can be implemented. This does not require the high transistor count of conventional analogue multiplier circuits.
Keywords :
PROM; VLSI; field effect integrated circuits; integrated memory circuits; neural nets; EEPROM devices; EEPROM synapses; VLSI neural networks; approximate multiplicative Hebbian learning rules; dynamic analogue learning; floating gate tunnel oxide; learning algorithms; logarithmic neural voltages; low synaptic complexity; pseudo-Hebbian plasticity; synaptic plasticity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890543
Filename :
31911
Link To Document :
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