Title :
EEPROM synapses exhibiting pseudo-Hebbian plasticity
Author :
Card, H.C. ; Moore, W.R.
Author_Institution :
Oxford Univ., UK
fDate :
6/8/1989 12:00:00 AM
Abstract :
Dynamic analogue learning in VLSI neural networks can be achieved with low synaptic complexity using EEPROM devices of the floating gate tunnel oxide type. When logarithmic neural voltages are employed, learning algorithms describing synaptic plasticity that approximate multiplicative Hebbian learning rules can be implemented. This does not require the high transistor count of conventional analogue multiplier circuits.
Keywords :
PROM; VLSI; field effect integrated circuits; integrated memory circuits; neural nets; EEPROM devices; EEPROM synapses; VLSI neural networks; approximate multiplicative Hebbian learning rules; dynamic analogue learning; floating gate tunnel oxide; learning algorithms; logarithmic neural voltages; low synaptic complexity; pseudo-Hebbian plasticity; synaptic plasticity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890543