Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Author

Wu, Yung-Chun ; Chang, Ting-Chang ; Liu, Po-Tsun ; Chen, Chi-Shen ; Tu, Chun-Hao ; Zan, Hsiao-Wen ; Tai, Ya-Hsiang ; Chang, Chun-Yen

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

52

Issue

10

fYear

2005

Firstpage

2343

Lastpage

2346

Abstract

This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.

Keywords

doping profiles; elemental semiconductors; nanowires; silicon; thin film transistors; LDD; channel width effect; electrical characteristic; electrical performance; lightly doped drain; nanoscale TFT; nanowire channels; polysilicon TFT; polysilicon thin-film transistors; single-gate structure; tri-gate structure; Active matrix liquid crystal displays; CMOS technology; Electric variables; Glass; Grain boundaries; Leakage current; MOSFET circuits; Silicon on insulator technology; Thin film transistors; Voltage; Lightly doped drain (LDD); nanowire; polysilicon; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.856797

Filename

1510930