Title :
Scaling of GaAs/AlGaAs laser diodes for submilliampere threshold current
Author :
Marclay, E. ; Arent, Doug J. ; Harder, Christian ; Meier, H.P. ; Walter, W. ; Webb, David J.
Author_Institution :
IBM Res. Div., Zurich Res. Lab., Ruschlikon, Switzerland
fDate :
7/6/1989 12:00:00 AM
Abstract :
GaAs/AlGaAs lasers grown by a single-step MBE on grooved substrates have been used to investigate the scaling of lasers for very low threshold current. By tuning the facet reflectivity and the laser length, to keep the photon lifetime constant, it has been possible to scale down the threshold current to 0.65 mA without changing the external efficiency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical interconnections; semiconductor junction lasers; semiconductor technology; 0.65 mA; GaAs-AlGaAs laser diodes; external efficiency; facet reflectivity; grooved substrates; laser length; low threshold current; optical interconnect; photon lifetime; scaling of lasers; semiconductors; single-step MBE; submilliampere threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890598
