DocumentCode
1170866
Title
Scaling of GaAs/AlGaAs laser diodes for submilliampere threshold current
Author
Marclay, E. ; Arent, Doug J. ; Harder, Christian ; Meier, H.P. ; Walter, W. ; Webb, David J.
Author_Institution
IBM Res. Div., Zurich Res. Lab., Ruschlikon, Switzerland
Volume
25
Issue
14
fYear
1989
fDate
7/6/1989 12:00:00 AM
Firstpage
892
Lastpage
894
Abstract
GaAs/AlGaAs lasers grown by a single-step MBE on grooved substrates have been used to investigate the scaling of lasers for very low threshold current. By tuning the facet reflectivity and the laser length, to keep the photon lifetime constant, it has been possible to scale down the threshold current to 0.65 mA without changing the external efficiency.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical interconnections; semiconductor junction lasers; semiconductor technology; 0.65 mA; GaAs-AlGaAs laser diodes; external efficiency; facet reflectivity; grooved substrates; laser length; low threshold current; optical interconnect; photon lifetime; scaling of lasers; semiconductors; single-step MBE; submilliampere threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890598
Filename
31921
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