Title :
GaAs/AlGaAs grating surface-emitting diode lasers on Si substrates
Author :
Connolly, James ; Dinkel, N. ; Menna, R. ; Andrews, Jeffrey
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
fDate :
7/6/1989 12:00:00 AM
Abstract :
A monolithic grating surface-emitting, GaAs/AlGaAs, separate-confinement-heterostructure, single-quantum-well diode laser has been fabricated on a Si substrate using a single-step metalorganic chemical vapour deposition process. An output power of 30 mW has been obtained under pulsed operation with a peak emission wavelength of 885 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor growth; semiconductor junction lasers; silicon; substrates; vapour phase epitaxial growth; 30 mW; 885 nm; Bragg reflecting grating; DBR laser; GaAs-AlGaAs; OEIC; SCH-SQW LD; Si substrates; distributed Bragg reflection laser; grating surface-emitting diode lasers; metalorganic chemical vapour deposition process; monolithic grating surface-emitting; output power; peak emission wavelength; pulsed operation; semiconductors; separate-confinement-heterostructure; single-quantum-well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890604
