Title :
Study on Bi-CMOS devices utilising SIMOX technology
Author :
Matsumoto, Shinichi ; Ohno, Tetsufumi ; Izumi, Kiyotaka
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
7/6/1989 12:00:00 AM
Abstract :
A fundamental Bi-CMOS process based on SIMOX technology that can implement both CMOS/SIMOX and npn-bipolar/bulk transistors on the same chip is described. The CMOS and npn-bipolar transistors fabricated on separate substrates to verify the feasibility of this process, exhibited satisfactory operational characteristics.
Keywords :
BIMOS integrated circuits; integrated circuit technology; semiconductor-insulator boundaries; SIMOX technology; bulk bipolar transistors; feasibility; fundamental Bi-CMOS process; npn-bipolar transistors; operational characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890606
