Title :
A miniature 25-GHz 9-dB CMOS cascaded single-stage distributed amplifier
Author :
Ming-Da Tsai ; Kuo-Liang Deng ; Huei Wang ; Chun-Hung Chen ; Chih-Sheng Chang ; Chern, J.G.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 25-GHz complementary metal oxide semiconductor (CMOS) cascaded single-stage distributed amplifier (CSSDA) using standard 0.18-μm CMOS technology is presented in this letter. It demonstrates the highest gain-bandwidth product (GBP) with smallest chip area reported for a fully-integrated CMOS wideband amplifier using a standard Si-based integrated circuit process. The chip size including testing pads is only 0.36mm2, and the ratio of GBP to chip size achieves 552GHz/mm2. This circuit is the first CSSDA realized in CMOS technology, and represents state-of-the-art performances.
Keywords :
CMOS integrated circuits; MMIC amplifiers; cascade networks; distributed amplifiers; integrated circuit design; wideband amplifiers; 0.18 micron; 25 GHz; CMOS cascaded single-stage distributed amplifier; CMOS technology; CMOS wideband amplifier; Si-based integrated circuit process; complementary metal oxide semiconductor CSSDA; gain-bandwidth product; helical inductor; microwave monolithic integrated circuit; Bandwidth; Broadband amplifiers; CMOS process; CMOS technology; Circuit testing; Distributed amplifiers; Distributed parameter circuits; Gain; Inductors; Integrated circuit technology; Complementary metal oxide semiconductor (CMOS); distributed amplifier; helical inductor; microwave monolithic integrated circuit (MMIC);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.837387