Title :
Preliminary aging tests on 1.5 mu m band multiple-quantum-well distributed-feedback laser diodes grown by MOVPE
Author :
Kitamura, M. ; Sasaki, T. ; Takano, S. ; Yamada, H. ; Hasumi, H. ; Mito, I.
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
7/6/1989 12:00:00 AM
Abstract :
The letter reports the first encouraging results from preliminary aging tests of 1.5 mu m band multiple-quantum-well distributed-feedback laser diodes, grown on InP grating substrate by metalorganic vapour-phase epitaxy. The devices operated stably in 50 degrees C-5 mW-6000 h and 70 degrees C-5 mW-4000 h autopower control accelerated aging tests.
Keywords :
III-V semiconductors; ageing; distributed feedback lasers; gallium arsenide; indium compounds; life testing; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 5 mA; 50 C; 6000 h; 70 C; GaInAsP-InP; InP; InP grating substrate; MOVPE; MQW-DFB-LD; aging tests; autopower control accelerated aging tests; distributed-feedback laser diodes; metalorganic vapour-phase epitaxy; multiple-quantum-well; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890618
