• DocumentCode
    1171069
  • Title

    Room-temperature continuous-wave operation of short-wavelength GaInP/AlGaInP laser grown on

  • Author

    Minagawa, S. ; Tanaka, T. ; Kondow, M.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    25
  • Issue
    14
  • fYear
    1989
  • fDate
    7/6/1989 12:00:00 AM
  • Firstpage
    925
  • Lastpage
    926
  • Abstract
    GaInP/AlGaInP gain-guided lasers on
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAs; GaInP-AlGaInP-GaAs; MOVPE; absence of bandgap shrinkage; gain-guided lasers; metalorganic vapour phase epitaxy; properties; red light emission; room-temperature CW operation; short wavelength laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890620
  • Filename
    31943