Title :
Infrared intraband absorption detectors with etched 35 degrees mesa facets for vertically incident light
Author :
Dobbelaere, Wim ; Van Hove, Marleen ; De Raedt, W. ; Deneffe, K. ; De Boeck, Jo ; Mertens, Robert ; Borghs, G.
Author_Institution :
Interuniv. Micro-Electron. Center, Leuven, Belgium
fDate :
7/6/1989 12:00:00 AM
Abstract :
Reports for the first time of GaAs/AlGaAs intraband absorption detectors that are able to detect vertically incident long-wavelength infrared light (8 mu m) through etched 35 degrees mesa facets. With 2 V bias voltage the authors obtained responsivities of 0.06 A/W at 77 K and 0.11 A/W at 40 K and dark current densities of 19 pA/ mu m2 at 77 K and 0.24 pA/ mu m2 at 40 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; semiconductor technology; 2 V; 40 K; 77 K; 8 micron; GaAs-AlGaAs; MQW; bias voltage; dark current densities; intraband absorption detectors; long-wavelength infrared light; mesa facets; responsivities; vertically incident light;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890623
