Hot carrier transport effect in Schottky-barrier diode grown by MBE

Author

Hwang, Chang G. ; Dutton, Robert W.

Author_Institution

Integrated Circuit Lab., Stanford Univ., CA, USA

Volume

7

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

578

Lastpage

583

Abstract

Hot-electron transport effects in Schottky-barrier diodes grown by molecular-beam epitaxy (MBE) were investigated. Comparisons with experimental results for an Al-n⁺ GaAs diode shows that terminal currents obtained using the Monte Carlo (MC) method agree well with experiment and are higher than those of conventional analysis for the forward-bias condition. A much higher thermionic-emission velocity at the Schottky was obtained using the MC analysis compared to previously published results. It is argued that these hot-electron transport effects should be included when analyzing device physics and current-voltage characteristics of Schottky-barrier diodes grown by MBE

Keywords

III-V semiconductors; Monte Carlo methods; Schottky-barrier diodes; gallium arsenide; hot carriers; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor-metal boundaries; Al-GaAs; III-V semiconductors; MBE; Monte Carlo method; Schottky-barrier diode; hot carrier transport effect; hot-electron transport effects; molecular-beam epitaxy; semiconductor epitaxial layers; terminal currents; thermionic-emission velocity; Electrons; Gallium arsenide; Hot carriers; Molecular beam epitaxial growth; Monte Carlo methods; Schottky barriers; Schottky diodes; Semiconductor diodes; Thermionic emission; Tunneling;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.3195

Filename

3195