Title :
Experimental observation of spectral tuning in twin-segment double quantum well (DQW) AlGaAs diode laser
Author :
White, Ian H. ; Garrett, B.
Author_Institution :
Cambridge Univ., UK
fDate :
7/20/1989 12:00:00 AM
Abstract :
Wavelength tuning of the spectral gain peak in an asymmetric twin segment DQW AlGaAs laser over 6 nm has been achieved by varying a reverse bias current to the shorter segment with high forward injection in the longer section. Tuning is attributed to bandgap narrowing at high charge concentrations, allowing the optical wavelength to hop across 70 consecutive modes.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; AlGaAs; bandgap narrowing; diode laser; double quantum well; forward injection; optical wavelength; reverse bias current; spectral gain peak; spectral tuning; twin segment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890638
