DocumentCode
1171228
Title
Experimental observation of spectral tuning in twin-segment double quantum well (DQW) AlGaAs diode laser
Author
White, Ian H. ; Garrett, B.
Author_Institution
Cambridge Univ., UK
Volume
25
Issue
15
fYear
1989
fDate
7/20/1989 12:00:00 AM
Firstpage
953
Lastpage
954
Abstract
Wavelength tuning of the spectral gain peak in an asymmetric twin segment DQW AlGaAs laser over 6 nm has been achieved by varying a reverse bias current to the shorter segment with high forward injection in the longer section. Tuning is attributed to bandgap narrowing at high charge concentrations, allowing the optical wavelength to hop across 70 consecutive modes.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; AlGaAs; bandgap narrowing; diode laser; double quantum well; forward injection; optical wavelength; reverse bias current; spectral gain peak; spectral tuning; twin segment;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890638
Filename
31962
Link To Document