Title :
GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching
Author :
Matsui, Takashi ; Sugimoto, Hiroshi ; Ontsuka, K. ; Abe, Y. ; Ogata, Hiroaki
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
7/20/1989 12:00:00 AM
Abstract :
A 1.5 mu m GaInAsP/InP laser is monolithically integrated with a photodiode. The laser is isolated from the photodiode by an etched groove formed by reactive ion etching. Ethane and hydrogen gases are used as an etchant of reactive ion etching instead of chlorinated gas. The threshold current of the laser under CW operation and the sensitivity of the monitor photodiode are 57 mA and 0.24 A/W, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodetectors; semiconductor junction lasers; sputter etching; 1.5 micron; 57 mA; CW operation; GaInAsP-InP; etched groove; mass transport laser; photodetector; reactive ion etching; sensitivity; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890639
