DocumentCode
1171240
Title
GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching
Author
Matsui, Takashi ; Sugimoto, Hiroshi ; Ontsuka, K. ; Abe, Y. ; Ogata, Hiroaki
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
Volume
25
Issue
15
fYear
1989
fDate
7/20/1989 12:00:00 AM
Firstpage
954
Lastpage
956
Abstract
A 1.5 mu m GaInAsP/InP laser is monolithically integrated with a photodiode. The laser is isolated from the photodiode by an etched groove formed by reactive ion etching. Ethane and hydrogen gases are used as an etchant of reactive ion etching instead of chlorinated gas. The threshold current of the laser under CW operation and the sensitivity of the monitor photodiode are 57 mA and 0.24 A/W, respectively.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodetectors; semiconductor junction lasers; sputter etching; 1.5 micron; 57 mA; CW operation; GaInAsP-InP; etched groove; mass transport laser; photodetector; reactive ion etching; sensitivity; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890639
Filename
31963
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