Title :
Planar-junction, top-illuminated GaInAs/InP pin photodiode with bandwidth of 25 GHz
Author :
Wake, D. ; Walling, R.H. ; Henning, I.D. ; Parker, D.G.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
7/20/1989 12:00:00 AM
Abstract :
A top-illuminated GaInAs/InP pin photodiode has been produced in a planar-junction configuration, which combines high reliability (no change in dark current over 4700 h at 175 degrees C) with the widest bandwidth (25 GHz), and highest quantum efficiency (80% at 1.55 mu m), yet reported for this type of device.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-i-n diodes; photodiodes; 1.55 micron; 175 degC; 25 GHz; 80 percent; GaInAs-InP; bandwidth; dark current; pin photodiode; planar-junction configuration; quantum efficiency; top-illuminated;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890647
