DocumentCode
1171343
Title
Effects of annealing on electrical properties of Se-implanted GaAs
Author
Sealy, B.J. ; Rezazadeh, Ali A.
Volume
25
Issue
15
fYear
1989
fDate
7/20/1989 12:00:00 AM
Firstpage
970
Lastpage
972
Abstract
Observes for the first time reversible changes in the sheet carrier concentration of rapid thermally annealed Se-implanted GaAs samples during subsequent heat treatments. The electrical profiles of the Se-implanted samples have also been modified during the annealing processes. These modifications can lead to significant degradation in the performance of devices.
Keywords
III-V semiconductors; annealing; carrier density; gallium arsenide; selenium; GaAs:Se; degradation; electrical profiles; heat treatments; rapid thermally annealed; reversible changes; sheet carrier concentration;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890649
Filename
31973
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