Title :
Effects of annealing on electrical properties of Se-implanted GaAs
Author :
Sealy, B.J. ; Rezazadeh, Ali A.
fDate :
7/20/1989 12:00:00 AM
Abstract :
Observes for the first time reversible changes in the sheet carrier concentration of rapid thermally annealed Se-implanted GaAs samples during subsequent heat treatments. The electrical profiles of the Se-implanted samples have also been modified during the annealing processes. These modifications can lead to significant degradation in the performance of devices.
Keywords :
III-V semiconductors; annealing; carrier density; gallium arsenide; selenium; GaAs:Se; degradation; electrical profiles; heat treatments; rapid thermally annealed; reversible changes; sheet carrier concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890649
