Title :
10 watt CW, 5000 h lifetime monolithic AlGaAs laser diode arrays
Author :
Sakamoto, Makoto ; Welch, D.F. ; Scifres, D.R.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
7/20/1989 12:00:00 AM
Abstract :
1 cm-wide monolithic laser diode arrays emitting at about 810 nm with a 3 mm total active aperture width have been life-tested at 10 W constant power at 20 degrees C heat-sink temperature. One array has been operated for over 3000 h and has a projected lifetime in excess of 5000 h.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 10 W; 20 degC; 810 nm; AlGaAs; heat-sink temperature; laser diode arrays; projected lifetime; total active aperture width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890650
