2.5 W, C-band, GaAs/AlGaAs heterojunction bipolar power transistor

Author

Long, A.P. ; Goodridge, I.H. ; King, J.P. ; Holden, A.J. ; Metcalfe, J.G. ; Hayes, R.C. ; Nicklin, R. ; Goodfellow, R.C.

Author_Institution

Plessey Res. Caswell Ltd., Towcester, UK

Volume

25

Issue

15

fYear

1989

fDate

7/20/1989 12:00:00 AM

Firstpage

979

Lastpage

981

Abstract

A high-power GaAs/AlGaAs microwave heterojunction bipolar transistor (HBT) with a total emitter periphery of 1.2 mm has been designed and fabricated. At 4 GHz an output power at 1 dB gain compression of 1 W with 5 dB gain and 30% peak power added efficiency was obtained in CW class A. Under pulse bias operation the output power increased to 2.54 W with 6.4 dB gain and 37% peak power added efficiency. This represents a significant increase in power handling over previous power HBTs and demonstrates the potential of these devices as building blocks in power amplifier modules. A large-signal model has been developed to run on SPICE to predict the power performance for the device and the optimum load impedances.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 2.5 W; 37 percent; 4 GHz; 6.4 dB; C-band; CW class A; GaAs-AlGaAs; SPICE; emitter periphery; gain compression; heterojunction bipolar transistor; large-signal model; optimum load impedances; output power; power HBTs; power added efficiency; power handling; power transistor; pulse bias operation; semiconductors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890655

Filename

31979