Title :
Integrated optic 1*4 splitter in SiO2/GeO2
Author :
Nourshargh, N. ; Starr, E.M. ; Ong, T.M.
Author_Institution :
GEC Hirst Res. Centre, Wembley, UK
fDate :
7/20/1989 12:00:00 AM
Abstract :
Reports for the first time the fabrication of a single-mode germania-doped silica 1*4 splitter using microwave plasma CVD and reactive ion etching. The device is fabricated on a silica substrate, has a splitting ratio of 6+or-1.4 dB and a total excess loss (including fibre coupling) of 3.1 dB, at 1.3 mu m.
Keywords :
germanium compounds; integrated optics; optical waveguide components; silicon compounds; 1.3 micron; 3.1 dB; SiO 2; SiO 2-GeO 2; excess loss; fabrication; fibre coupling; microwave plasma CVD; reactive ion etching; single-mode; splitting ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890656
