• DocumentCode
    1171453
  • Title

    Very narrow spectral linewidth of GaInAs MQW-DFB-PPIBH laser diodes

  • Author

    Sakakibara, Y. ; Takemoto, Ayumi ; Nakajima, Yoshiki ; Fujiwara, Masamichi ; Yoshide, N. ; Kekimoto, S.

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    25
  • Issue
    15
  • fYear
    1989
  • fDate
    7/20/1989 12:00:00 AM
  • Firstpage
    988
  • Lastpage
    990
  • Abstract
    Five-well GaInAs MQW-DFB-PPIBH laser diodes have been fabricated. The low threshold current of 19 mA and the very narrow spectral linewidth of 1.1 MHz have been achieved in the 300 mu m solitary lasers.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; semiconductor quantum wells; 1.1 MHz; 19 mA; 300 micron; GaInAs; MQW-DFB-PPIBH laser diodes; narrow spectral linewidth; optical communication; p-substrate partially inverted BH laser diode; semiconductors; solitary lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890661
  • Filename
    31985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1171453