Title :
Very narrow spectral linewidth of GaInAs MQW-DFB-PPIBH laser diodes
Author :
Sakakibara, Y. ; Takemoto, Ayumi ; Nakajima, Yoshiki ; Fujiwara, Masamichi ; Yoshide, N. ; Kekimoto, S.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
7/20/1989 12:00:00 AM
Abstract :
Five-well GaInAs MQW-DFB-PPIBH laser diodes have been fabricated. The low threshold current of 19 mA and the very narrow spectral linewidth of 1.1 MHz have been achieved in the 300 mu m solitary lasers.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; semiconductor quantum wells; 1.1 MHz; 19 mA; 300 micron; GaInAs; MQW-DFB-PPIBH laser diodes; narrow spectral linewidth; optical communication; p-substrate partially inverted BH laser diode; semiconductors; solitary lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890661
