Particle deposition and removal in wet cleaning processes for ULSI manufacturing

Author

Itano, Mitsushi ; Kern, Fredrick W., Jr. ; Rosenberg, Reed W. ; Miyashita, Masayuki ; Kawanabe, Ichiro ; Ohmi, Tadahiro

Author_Institution

Dept. of Electron., Tohoku Univ., Sendai, Japan

Volume

5

Issue

2

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

114

Lastpage

120

Abstract

Particle deposition on wafer surfaces in solutions can be described by the well-documented principles of colloid science. Particle concentration, solution pH, and ionic strength in solutions are all important factors which determine the number of particles which deposit on wafer surfaces immersed in liquids. maximum particle deposition is observed in high ionic strength acidic solutions and is reduced as solution pH increase. Particle removal efficiencies in various solutions were also investigated; NH₄OH-H₂O₂-H ₂O solutions were optimized in NH₄OH content around the ratio of 0.05:1.15 (0.05 part NH₄OH, 1 part H₂O₂, 5 parts H₂O). Wafer damage as measured by surface micro-roughness was not increased during NH₄OH-H₂O₂-H₂O treatment using this ratio

Keywords

VLSI; integrated circuit manufacture; surface treatment; NH₄OH-H₂O₂-H₂O solutions; ULSI manufacturing; acidic solutions; ionic strength; particle concentration; particle deposition; particle removal; particulate contamination; solution pH; surface micro-roughness; surface treatment; wafer surfaces; wafers in solutions; wet cleaning processes; Chemistry; Cleaning; Fabrication; Hafnium; Liquids; Manufacturing processes; Silicon; Surface contamination; Surface treatment; Ultra large scale integration;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.136272

Filename

136272