High-quality dual-gate PMOS devices in local overgrowth (LOG)

Author

Zingg, R.P. ; Hofflinger, B. ; Neudeck, G.W.

Author_Institution

Inst. for Microelectron., Stuttgart, West Germany

Volume

25

Issue

15

fYear

1989

fDate

7/20/1989 12:00:00 AM

Firstpage

1009

Lastpage

1011

Abstract

A new SOI technology is introduced with enhanced device performance and small geometries. The low-impurity crystalline SOI film is produced by VPE local overgrowth (LOG) over an oxide, an important alternative to recrystallised silicon films for 3D-CMOS and SOI circuits. This technology was developed from epitaxial lateral overgrowth (ELO) to allow the use of the substrate as an interconnect layer and to enable access to submerged gates. Surface-channel mobilities are measured to be 165 cm²/V s for PMOS devices built on top of the overgrowth and 160 cm²/V s for devices with a submerged gate. The structures produced by LOG are planar and allow for further stacking of devices.

Keywords

insulated gate field effect transistors; integrated circuit technology; semiconductor technology; semiconductor-insulator boundaries; vapour phase epitaxial growth; SOI technology; Si-SiO₂; access to submerged gates; dual-gate PMOS devices; enhanced device performance; high quality MOSFETs; local overgrowth; low-impurity crystalline SOI film; planar structures; small geometries; stacking of devices;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890675

Filename

31999