Title :
Versatile polycrystalline silicon transistor/switching structure
Author_Institution :
Lancashire Polytech., Preston, UK
fDate :
7/20/1989 12:00:00 AM
Abstract :
A simple p+n-polysilicon structure is proposed to perform either as a transistor or a two-state switching device. An outline theory is presented using a multigrain model for the polycrystalline silicon layer. Charging and discharging of traps at the grain boundaries are included in the theory. The effect of the recombination-generation mechanism in the neutral n2 silicon region is also taken into account.
Keywords :
elemental semiconductors; semiconductor device models; semiconductor switches; silicon; transistors; grain boundaries; multigrain model; p +n-polysilicon structure; polycrystalline Si; recombination-generation mechanism; semiconductors; theory; transistor; two-state switching device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890676
