• DocumentCode
    1171627
  • Title

    Versatile polycrystalline silicon transistor/switching structure

  • Author

    Al Bustani, A.

  • Author_Institution
    Lancashire Polytech., Preston, UK
  • Volume
    25
  • Issue
    15
  • fYear
    1989
  • fDate
    7/20/1989 12:00:00 AM
  • Firstpage
    1011
  • Lastpage
    1012
  • Abstract
    A simple p+n-polysilicon structure is proposed to perform either as a transistor or a two-state switching device. An outline theory is presented using a multigrain model for the polycrystalline silicon layer. Charging and discharging of traps at the grain boundaries are included in the theory. The effect of the recombination-generation mechanism in the neutral n2 silicon region is also taken into account.
  • Keywords
    elemental semiconductors; semiconductor device models; semiconductor switches; silicon; transistors; grain boundaries; multigrain model; p +n-polysilicon structure; polycrystalline Si; recombination-generation mechanism; semiconductors; theory; transistor; two-state switching device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890676
  • Filename
    32000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1171627