DocumentCode
1171745
Title
Electrical characterization of a JFET-accessed GaAs dynamic RAM cell
Author
Neudeck, P.G. ; Dungan, T.E. ; Melloch, Michael R. ; Cooper, James A.
Author_Institution
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
10
Issue
11
fYear
1989
Firstpage
477
Lastpage
480
Abstract
A complete one-transistor dynamic RAM cell in GaAs is discussed. Read and write operations is monitored by observing the capacitance of the storage node. Storage times on the order of a few seconds are obtained at room temperature with an activation energy slightly less than half the zero-temperature bandgap.<>
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated memory circuits; random-access storage; GaAs; activation energy; one-transistor dynamic RAM cell; read operation; storage node capacitance; storage times; write operations; zero-temperature bandgap; Capacitance; Capacitors; DRAM chips; Energy storage; Gallium arsenide; P-n junctions; Photonic band gap; Random access memory; Temperature; Time measurement;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.43109
Filename
43109
Link To Document