DocumentCode :
1171955
Title :
Parametric yield optimization for MOS circuit blocks
Author :
Hocevar, Dale E. ; Cox, Paul F. ; Yang, Ping
Author_Institution :
Texas Instrum., Inc., Dallas, TX, USA
Volume :
7
Issue :
6
fYear :
1988
fDate :
6/1/1988 12:00:00 AM
Firstpage :
645
Lastpage :
658
Abstract :
Two techniques are presented for optimizing the parametric yield of digital MOS circuit blocks for VLSI designs. The first is based on quasi-Newton methods and utilizes the gradient of the yield. A novel technique for computing this yield gradient is derived and algorithms for its implementation are discussed. Geometrical considerations motivate the second method which formulates the problem in terms of a minimax problem. Both yield optimization techniques utilize transient sensitivity information from circuit simulations. Encouraging results have been obtained thus far; several circuit examples are included to demonstrate these techniques
Keywords :
VLSI; field effect integrated circuits; optimisation; MOS circuit blocks; VLSI designs; gradient; minimax problem; optimization; parametric yield; quasi-Newton methods; transient sensitivity information; Circuit simulation; Circuit synthesis; Computational efficiency; Design optimization; Digital circuits; Geometry; Instruments; Minimax techniques; Statistical analysis; Very large scale integration;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.3204
Filename :
3204
Link To Document :
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