Low-frequency noise behavior of 0.15- mu m gate-length lattice-matched and lattice-mismatched MODFETs on InP substrates

Author

Thurairaj, Mohan S. ; Das, Mukunda B. ; Ballingall, James M. ; Ho, Pin ; Chao, P.C. ; Kao, Ming-Yih

Author_Institution

Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

12

Issue

8

fYear

1991

Firstpage

410

Lastpage

412

Abstract

Experimental data are presented on equivalent gate noise voltage from 1 to 10/sup 5/ Hz obtained from lattice-matched and strained InGaAs quantum-well modulation-doped field effect transistors (MODFETs). In both types of devices excess generation-recombination (g-r) noise is observed at or below 100 Hz above an ´apparent´ background 1/f noise with spectral intensity ranging from 0.5*10/sup -17/ to 2*10/sup -17/ V/sup 2/-Hz/sup -1/-cm/sup 2/ at 1 Hz. These results are comparable to those reported by S.M.J. Liu et al. (1986) for the pseudomorphic MODFETs.<>

Keywords

III-V semiconductors; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; 1 to 10/sup 5/ Hz; 1/f noise; 150 nm; HEMTs; InP substrates; LF noise behavior; equivalent gate noise voltage; excess generation-recombination noise; lattice matched MODFETs; lattice mismatched MODFETs; pseudomorphic MODFETs; semiconductors; spectral intensity; strained InGaAs quantum-well; Background noise; HEMTs; Indium gallium arsenide; Indium phosphide; Leakage current; Low-frequency noise; MODFETs; Noise generators; Quantum well devices; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119148

Filename

119148