Direct-contact type image sensors using a novel amorphous-silicon photodiode array

Author

Kakinuma, Hiroaki ; Mohri, Mikio ; Sakamoto, Masaaki ; Sawai, Hideo ; Shibata, Susumu ; Kasuya, Yukio ; Ohnuki, Yasuhide ; Chonan, Wataru

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

12

Issue

8

fYear

1991

Firstpage

413

Lastpage

415

Abstract

A novel type of amorphous-silicon (a-Si:H) photodiode array for direct-contact type (lens-less) line image sensors was developed. A U-shaped top ITO (tin-doped indium oxide) contact and a rectangular a-Si:H window resolves the accumulation of dust from the documents at the steps of the light window. Semi-insulating Al-Si-N and insulating SiN/sub X/ stacked films are successfully applied to the surface protection layer to prevent a charge buildup by friction with documents.<>

Keywords

amorphous semiconductors; elemental semiconductors; facsimile equipment; hydrogen; image scanners; image sensors; indium compounds; photodiodes; ITO contact; InSnO; amorphous Si:H; direct contact image sensors; dust accumulation prevention; insulating SiN/sub X/ stacked films; line image sensors; photodiode array; semi-insulating Al-Si-N films; surface protection layer; Electrodes; Friction; Glass; Image sensors; Insulation; Photodiodes; Protection; Sensor arrays; Shape; Silicon compounds;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119149

Filename

119149