MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O

Author

Ting, W. ; Lo, G.Q. ; Ahn, J. ; Chu, T.Y. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

12

Issue

8

fYear

1991

Firstpage

416

Lastpage

418

Abstract

MOS characteristics of ultrathin gate oxides prepared by furnace oxidizing Si in N/sub 2/O have been studied. Compared to control oxides grown in O/sub 2/, N/sub 2/O oxides exhibit significantly improved resistance to charge trapping and interface state generation under hot-carrier stressing. In addition, both charge to breakdown and time to breakdown are improved considerably. MOSFETs with N/sub 2/O gate dielectrics exhibit enhanced current drivability and improved resistance to g/sub m/ degradation during channel hot-electron stressing.<>

Keywords

dielectric thin films; insulated gate field effect transistors; oxidation; MOS characteristics; MOSFETs; N/sub 2/O atmosphere; SiO/sub 2/-Si/sub 3/N/sub 4/ films; TDDB; charge to breakdown; enhanced current drivability; furnace oxidation; furnace oxidizing; hot-carrier stressing; resistance to charge trapping; resistance to transconductance degradation; time to breakdown; ultrathin SiO/sub 2/; ultrathin gate oxides; Annealing; Breakdown voltage; Character generation; Electric breakdown; Interface states; MOS capacitors; Nitrogen; Oxidation; Stress; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119150

Filename

119150