A bridge circuit for the characterization of electrically programmable elements

Author

Shacham-Diamand, Yosi ; Sinar, Alex ; Sirkin, Eric ; Blech, Ilan ; Gerzber, Levy

Author_Institution

Dept. of electr. Eng., Technion Israel Inst. of Technol., Haifa, Israel

Volume

24

Issue

3

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

839

Lastpage

841

Abstract

A method for programming and characterizing electrically programmable elements of the antifuse type (i.e normally open) is described. The programming conditions are controlled by two transistors which isolate the programmable element (PEL) from the bias and common lines. The isolation from the external parasitic capacitance allows programming under conditions similar to that within a VLSI circuit. A parallel branch between the bias and common lines is added after programming to form a bridge structure. The PEL affects the symmetry of the bridge and its postprogramming electrical characteristics are measured indirectly after balancing the bridge. The operation of such circuit is demonstrated. A short discussion and some design consideration are also presented

Keywords

PROM; bridge circuits; integrated memory circuits; antifuse type; bias line; bridge circuit; common lines; electrically programmable elements; external parasitic capacitance; normally open; postprogramming electrical characteristics; Bridge circuits; CMOS technology; Electric breakdown; Electric variables; Electric variables measurement; Parallel programming; Parasitic capacitance; Read only memory; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.32048

Filename

32048