A simple electrical method to determine the Si and oxide thicknesses in SOI materials

Author

Vu, Duy-Phach ; Zavracky, Paul M. ; Boden, Milton J. ; Cheong, N.K.

Author_Institution

Kopin Corp., Taunton, MA, USA

Volume

12

Issue

8

fYear

1991

Firstpage

427

Lastpage

429

Abstract

It is shown that the thickness of the silicon and oxide layers of a silicon-on-insulator (SOI) structure can be determined from high-frequency capacitance-voltage measurements. The test device consists of a Schottky diode in series with a Si-oxide-Si capacitor. The Si film and the substrate are n-type. The operation of this device is explained for n-type Si with the help of the energy-band diagrams. It is demonstrated that this simple test device can be implemented as a process monitor for silicon thickness control.<>

Keywords

capacitance measurement; semiconductor-insulator boundaries; silicon; silicon compounds; thickness measurement; SOI; SOI materials; Schottky diode; Si thickness measurement; Si-SiO/sub 2/-Si capacitor; electrical method; energy-band diagrams; high-frequency capacitance-voltage measurements; operation; oxide thickness measurement; process monitor; test device; thickness control; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Monitoring; Schottky diodes; Semiconductor films; Silicon on insulator technology; Substrates; Testing; Thickness measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119154

Filename

119154