Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique

Author

Ioannou, Dimitris E. ; Zhong, Xiaodong ; Mazhari, Baquer ; Campisi, George J. ; Hughes, Harold L.

Author_Institution

Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA

Volume

12

Issue

8

fYear

1991

Firstpage

430

Lastpage

432

Abstract

The dynamic transconductance technique of MOSFET interface characterization is adapted to fully depleted silicon-on-insulator (SOI) transistors and is used to measure the interface-state density energy profiles in several SIMOX (separation by implanted oxygen) transistors. By making measurements first with the current flowing through the channel under measurement and then through the opposite channel, much of the energy gap (from accumulation to well into weak inversion) can be probed. Remarkably high sensitivity is achieved by utilizing the imaginary part of the dynamic transconductance. Measured interface trap densities were in the region of approximately 10/sup 10/-10/sup 11/ eV/sup -1/-cm/sup -2/.<>

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; MOSFET interface characterization; SIMOX transistors; Si-SiO/sub 2/; dynamic transconductance technique; energy gap probing; fully depleted SOI MOSFETs; interface trap densities; interface-state density energy profiles; Admittance; Capacitance; Current measurement; Density measurement; Energy measurement; FETs; Frequency; MOSFETs; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119155

Filename

119155