DocumentCode :
117207
Title :
The influence of n-type silicon piezoresistors pre-strain state on their piezoresistance
Author :
Gridchin, V.A. ; Cherkaev, A.S. ; Sayanova, E.G.
Author_Institution :
Novosibirsk state Tech. Univ., Novosibirsk, Russia
fYear :
2014
fDate :
2-4 Oct. 2014
Firstpage :
55
Lastpage :
58
Abstract :
Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·1016 - 1·1020 cm-3 are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.
Keywords :
crystallography; elemental semiconductors; impurities; numerical analysis; piezoresistive devices; resistors; silicon; Si; compressive pre-strain state; crystallographic axis; impurity concentrations; n-type silicon longitudinal piezoresistance coefficients; n-type silicon piezoresistor pre-strain state; transverse piezoresistance coefficients; uniaxial pre-strain state; Doping; Piezoresistance; Piezoresistive devices; Sensors; Silicon; Strain; Stress; piezoresistance; piezoresistor; strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2014 12th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-6019-4
Type :
conf
DOI :
10.1109/APEIE.2014.7040925
Filename :
7040925
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=117207
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