DocumentCode
1172072
Title
An analytical model for back-gate effects on ultrathin-film SOI MOSFET´s
Author
Chen, Heng Tien ; Huang, Ruey Shing
Author_Institution
Sch. of Electr. Eng., New South Wales Univ., Kensington, NSW, Australia
Volume
12
Issue
8
fYear
1991
Firstpage
433
Lastpage
435
Abstract
An analytical model including the semiconducting substrate effect for silicon-on-insulator (SOI) MOSFET threshold and subthreshold operation is presented. The potential drop across the substrate tends to reduce the front-gate threshold voltage as well as subthreshold swing. However, if the substrate or the back-gate surface is accumulated, the substrate effects can be neglected. Five comprehensive operation regions under various bias conditions are distinguished and discussed for the first time.<>
Keywords
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI; Si ion insulator MOSFET; Si-SiO/sub 2/; back-gate effects; back-gate surface; bias conditions; front-gate threshold voltage; potential drop; semiconducting substrate effect; subthreshold operation; subthreshold swing; threshold operation; ultrathin-film; Analytical models; Capacitance; Dielectric constant; Dielectric substrates; Doping; MOSFET circuits; Semiconductivity; Semiconductor films; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.119156
Filename
119156
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