Title :
Low-frequency noise measurement-based reliability testing of VLSI interconnects with different geometry
Author :
Rawat, K.S. ; Massiha, G.H.
Author_Institution :
Dept. of Technol., Elizabeth City State Univ., NC, USA
Abstract :
Low-frequency noise measurements were performed on thin metallic very large-scale integration (VLSI) interconnects of three different geometries. These measurements were carried out under stressing current densities between 1.0×105 A/cm2 and 2.2×106 A/cm2 at different ambient temperatures up to 280°C, in order to investigate the dependence of low-frequency noise on the geometrical shape of the VLSI interconnects. The behavior of these samples under these conditions is analyzed in this letter.
Keywords :
VLSI; integrated circuit interconnections; integrated circuit noise; reliability; thin films; 280 C; VLSI interconnects; interconnects geometrical shape; low-frequency noise measurement; metal thin films; metallic VLSI; noise spectral density; reliability testing; stressing current density; thin VLSI; very large-scale integration; Current measurement; Density measurement; Geometry; Large scale integration; Low-frequency noise; Noise measurement; Performance evaluation; Shape measurement; Testing; Very large scale integration; 65; Low-frequency noise; VLSI; interconnects; metal thin films; noise measurement system; noise spectral density; reliability; very large-scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.838620
