A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications

Author

Greenberg, David R. ; del Alamo, Jesús A. ; Harbison, James P. ; Florez, Leigh T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

12

Issue

8

fYear

1991

Firstpage

436

Lastpage

438

Abstract

Molecular beam epitaxy (MBE)-grown L/sub g/=1.7- mu m pseudomorphic Al/sub 0.38/Ga/sub 0.62/As/n/sup +/-In/sub 0.15/Ga/sub 0.85/As metal-insulator-doped channel FETs (MIDFETs) are presented that display extremely broad plateaus in both f/sub T/ and f/sub max/ versus V/sub GS/, with f/sub T/ sustaining 90% of its peak over a gate swing of 2.6 V. Drain current is highly linear with V/sub GS/ over this swing, reaching 514 mA/mm. No frequency dispersion in g/sub m/ up to 3 GHz was found, indicating the absence of electrically active traps in the undoped AlGaAs pseudoinsulator layer. These properties combine to make the pseudomorphic MIDFET highly suited to linear, large-signal, broadband applications.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 1.7 micron; 3 GHz; Al/sub 0.38/Ga/sub 0.62/As-In/sub 0.15/Ga/sub 0.85/As; MBE; broadband applications; large-signal applications; metal-insulator-doped channel FET; pseudomorphic MIDFET; semiconductors; undoped AlGaAs pseudoinsulator layer; Electron traps; FETs; Flexible printed circuits; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFET circuits; Metal-insulator structures; Temperature sensors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119157

Filename

119157