Title :
Si/SiGe digital optoelectronic switch
Author :
Kovacic, S.J. ; Simmons, John G. ; Song, K. ; Noel, Jean-Philippe ; Houghton, D.C.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
The physical parameters and functional characteristics of a Si/SiGe digital optoelectronic switch are reported. The device is found to have bistable electrical states: a high-impedance (40 k Omega ) OFF state connected to a low-impedance (100 Omega ) ON state by a regime of negative differential resistance. The switching voltage and holding voltage are measured to be 2.6 and 1.3 V, respectively, and the switching current and holding current are measured to be 500 mu A and 1 mA, respectively. These DC characteristics are found to be similar to those measured in double heterostructure optoelectronic switching devices manifested in the AlGaAs/GaAs materials system. The DC characteristics of this Si/SiGe digital optoelectronic switch are also found to be sensitive to optical input and temperature.<>
Keywords :
Ge-Si alloys; optoelectronic devices; semiconductor junctions; semiconductor switches; silicon; 0.5 mA; 1 mA; 1.3 V; 100 ohm; 2.6 V; 40 kohm; DC characteristics; Si-SiGe; bistable electrical states; digital optoelectronic switch; functional characteristics; high impedance off state; holding current; holding voltage; light sensitive; low impedance on state; negative differential resistance; physical parameters; switching current; switching voltage; temperature effects; Current measurement; Electric resistance; Electrical resistance measurement; Gallium arsenide; Germanium silicon alloys; Optical bistability; Optical materials; Optical switches; Silicon germanium; Voltage measurement;
Journal_Title :
Electron Device Letters, IEEE
