Title :
SiGe-channel n-MOSFET by germanium implantation
Author :
Selvakumar, C.R. ; Hecht, Bruce
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
The first n-SiGe-channel MOSFETs fabricated using high-dose germanium implantation and solid-phase epitaxy are reported. The polysilicon-gate MOSFETs were fabricated in the same chip in which conventional polysilicon-gate n-MOSFETs were made and their electrical characteristics are compared. The SiGe-channel MOSFETs show some significantly better electrical characteristics as compared to the silicon-channel MOSFETs. For example, the SiGe MOSFETs show higher drain conductance in the triode region and higher transconductance overall. The threshold voltage of the SiGe MOSFET appears to be smaller and the carrier mobility in the channel appears to be higher.<>
Keywords :
Ge-Si alloys; insulated gate field effect transistors; ion implantation; carrier mobility; drain conductance; electrical characteristics; solid-phase epitaxy; threshold voltage; transconductance; triode region; Bipolar transistors; Chemical vapor deposition; Electric variables; Epitaxial growth; Fabrication; Germanium silicon alloys; MOSFET circuits; Molecular beam epitaxial growth; Silicon germanium; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
