High-mobility modulation-doped SiGe-channel p-MOSFETs

Author

Verdonckt-Vandebroek, Sophie ; Crabbé, Emmanuel F. ; Meyerson, Bernard S. ; Harame, David L. ; Restle, Phillip J. ; Stork, Johannes M C ; Megdanis, Andrew C. ; Stanis, Carol L. ; Bright, Arthur A. ; Kroesen, Gerrit M W ; Warren, Alan C.

Author_Institution

IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA

Volume

12

Issue

8

fYear

1991

Firstpage

447

Lastpage

449

Abstract

A novel subsurface SiGe-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n/sup +/ polysilicon gate, and p/sup +/ modulation doping is used. A boron-doped layer is located underneath the graded and undoped SiGe channel to minimize process sensitivity and maximize transconductance. Low-field hole mobilities of 220 cm/sup 2//V-s at 300 K and 980 cm/sup 2//V-s at 82 K were achieved in functional submicrometer p-MOSFETs.<>

Keywords

Ge-Si alloys; high electron mobility transistors; insulated gate field effect transistors; SiGe channel; channel mobility; device design; graded SiGe channel; hole mobilities; modulation doping; process sensitivity; submicrometer p-MOSFETs; threshold voltage; transconductance; Buildings; Degradation; Doping; Epitaxial layers; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119161

Filename

119161