Title :
Alternate metal virtual ground (AMG)-a new scaling concept for very high-density EPROMs
Author :
Eitan, Boaz ; Kazerounian, R. ; Bergemont, A.
Author_Institution :
Waferscale Integration Inc., Fremont, CA, USA
Abstract :
A new erasable programmable read-only memory (EPROM) array concept that reduces the cell size to the poly pitch in both directions is introduced. The key concepts that made the dramatic scaling possible are the virtual ground array with one metal line for every two diffusion bit lines, the segmentation of every other bit line, and the fieldless array. The cell size on 0.8- mu m technology is 2.56 mu m/sup 2/ and a 1- mu mm/sup 2/ cell is under development on a 0.5- mu m technology for the 64-Mb product. These cells are smaller by a factor of 2-3 than the standard EPROM cell on the same technology. The new array concept and its advantages are expandable to flash memories.<>
Keywords :
CMOS integrated circuits; EPROM; VLSI; integrated circuit technology; integrated memory circuits; 0.5 micron; 0.8 micron; 64 Mbit; CMOS; ULSI; alternate metal virtual ground; cell size; erasable programmable read-only memory; fieldless array; flash memories; high density EPROMs; metal line for every two diffusion bit lines; scaling concept; virtual ground array; EPROM; Flash memory; PROM; Read only memory; Split gate flash memory cells;
Journal_Title :
Electron Device Letters, IEEE
