A single p-i-n junction amorphous-silicon solar cell with conversion efficiency of 12.65%

Author

Arai, Y. ; Ishii, M. ; Shinohara, H. ; Yamazaki, Shumpei

Author_Institution

Semicond. Energy Lab. Co. Ltd., Kanagawa, Japan

Volume

12

Issue

8

fYear

1991

Firstpage

460

Lastpage

461

Abstract

A conversion efficiency of 12.65% was obtained at AM-1.5, 100 mW/cm/sup 2/ for a single p-i-n junction amorphous-Si solar cell of 1.05 cm/sup 2/, with a glass/SnO/sub 2//p-i-n/back-electrode structure. The solar cell had a short-circuit current of 19.13 mA/cm/sup 2/, an open-circuit voltage of 0.885 V, and a fill factor of 74.7%. The reason why the efficiency of the produced solar cell was enhanced by hot-annealing treatment is considered to be due to the reduction of the minute leaks caused by the pinhole treatment and the reduction of the number of pinholes by reverse-bias annealing treatment. It is believed that because of the minute irregularities on the surface of SnO/sub 2/, the diffuse light in the solar cell increased the effective optical length in the i layer. Therefore the collection efficiency in the long-wavelength region was enhanced.<>

Keywords

amorphous semiconductors; elemental semiconductors; p-i-n diodes; silicon; solar cells; 0.885 V; 12.65 percent; AM 1.5 operation; amorphous Si; collection efficiency; conversion efficiency; diffuse light; effective optical length; fill factor; hot-annealing treatment; long-wavelength region; open-circuit voltage; p-i-n junction; pinhole treatment; reverse-bias annealing; semiconductors; short-circuit current; solar cell; Annealing; Buffer layers; Electrodes; Glass; Light sources; PIN photodiodes; Photovoltaic cells; Substrates; Surface morphology; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119165

Filename

119165