Impact ionization in thin silicon diodes

Author

Agarwal, P. ; Goossens, M.J. ; Zieren, V. ; Aksen, E. ; Slotboom, J.W.

Author_Institution

Philips Res., Leuven, Belgium

Volume

25

Issue

12

fYear

2004

Firstpage

807

Lastpage

809

Abstract

We study the breakdown behavior of thin, abrupt silicon pin-diodes, using a low-power optical technique which can directly measure the avalanche multiplication factors even in the presence of large tunneling currents. Our measurements agree with a simple model for nonlocal avalanche generation, and we use this model to extend the breakdown predictions to a broad class of doped diodes similar to those found in the base-collector region of bipolar devices. Based on this analysis, we make quantitative estimates for the BV_CEO breakdown of modern Si and SiGe high-speed bipolar transistors.

Keywords

avalanche diodes; bipolar transistors; low-power electronics; silicon compounds; BV_ceo breakdown; SiGe; avalanche multiplication factors; bipolar devices; breakdown behavior; breakdown predictions; doped diodes; high-speed bipolar transistors; impact ionization; large tunneling currents; low-power optical technique; nonlocal avalanche generation; photodiodes; quantitative estimates; thin abrupt silicon pin-diodes; thin silicon diodes; Avalanche breakdown; Current measurement; Diodes; Electric breakdown; Germanium silicon alloys; High speed optical techniques; Impact ionization; Predictive models; Silicon germanium; Tunneling; 65; Avalanche breakdown; bipolar transistors; photodiodes;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.838557

Filename

1362782