Title :
SMART-P: rigorous three-dimensional process simulator on a supercomputer
Author :
Odanaka, Shinji ; Umimoto, Hiroyuki ; Wakabayashi, Mutsuko ; Esaki, Hideya
Author_Institution :
Matsushita Electr. Ind. Co., Ltd., Osaka, Japan
fDate :
6/1/1988 12:00:00 AM
Abstract :
A description is given of a three-dimensional process simulator, named SMART-P, that is based on the finite-difference approach to the supercomputer FACOM VP-100. To simulate the impurity redistribution and nonplanar structure in the Si/SiO2 system, this simulator contains a three-dimensional oxidation model, an interaction model of impurities, a numerical model of interstitial-assisted oxidation-enhanced diffusion, and other process models. The numerical process modeling in the Si/SiO2 system is described. The three-dimensional process modeling CAD (computer-aided design) has been realized by using efficient numerical algorithms based on the generalized coordinate transformation method. The capabilities of this simulator have been demonstrated in applications relating to both local oxidation of silicon (LOCOS) and trench-isolated 0.5μm MOSFET structures
Keywords :
circuit CAD; digital simulation; integrated circuit technology; oxidation; CAD; FACOM VP-100; MOSFET structures; SMART-P; Si-SiO2; finite-difference approach; generalized coordinate transformation method; impurity redistribution; interaction model; interstitial-assisted oxidation-enhanced diffusion; local oxidation; nonplanar structure; numerical model; size 0.5 μm; supercomputer; three-dimensional oxidation model; three-dimensional process simulator; trench-isolated; Application software; Computational modeling; Design automation; Finite difference methods; Impurities; MOSFET circuits; Numerical models; Oxidation; Silicon; Supercomputers;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
