DocumentCode
1172280
Title
Recessed polysilicon encapsulated local oxidation
Author
Cooper, Kent J. ; Roth, S.S. ; Ray, W. ; Kirsch, Howard C. ; Ko, J.
Author_Institution
Motorola Inc., Austin, TX, USA
Volume
12
Issue
10
fYear
1991
Firstpage
515
Lastpage
517
Abstract
Local oxidation of silicon (LOCOS) is the most commonly used isolation technology in silicon integrated circuits. The inherently large field oxide encroachment associated with LOCOS severely limits scalability. Recessed polysilicon encapsulated local oxidation (recessed PELOX) is demonstrated to achieve both low encroachment and increased field oxide recess. These benefits are obtained without sacrificing process simplicity or defectivity as evidenced by excellent gate oxide and diode quality.<>
Keywords
VLSI; integrated circuit technology; oxidation; diode quality; field oxide recess; gate oxide quality; isolation technology; low encroachment; oxide encroachment; process simplicity; recessed PELOX; scalability; Associate members; Diodes; Etching; Fabrication; Hafnium; Isolation technology; Oxidation; Scalability; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.119172
Filename
119172
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