Title :
Recessed polysilicon encapsulated local oxidation
Author :
Cooper, Kent J. ; Roth, S.S. ; Ray, W. ; Kirsch, Howard C. ; Ko, J.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
Local oxidation of silicon (LOCOS) is the most commonly used isolation technology in silicon integrated circuits. The inherently large field oxide encroachment associated with LOCOS severely limits scalability. Recessed polysilicon encapsulated local oxidation (recessed PELOX) is demonstrated to achieve both low encroachment and increased field oxide recess. These benefits are obtained without sacrificing process simplicity or defectivity as evidenced by excellent gate oxide and diode quality.<>
Keywords :
VLSI; integrated circuit technology; oxidation; diode quality; field oxide recess; gate oxide quality; isolation technology; low encroachment; oxide encroachment; process simplicity; recessed PELOX; scalability; Associate members; Diodes; Etching; Fabrication; Hafnium; Isolation technology; Oxidation; Scalability; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
