A 3-10-GHz low-noise amplifier with wideband LC-ladder matching network

Author

Ismail, Aly ; Abidi, Asad A.

Author_Institution

Skyworks Solutions Inc., Irvine, CA, USA

Volume

39

Issue

12

fYear

2004

Firstpage

2269

Lastpage

2277

Abstract

Reactive matching is extended to wide bandwidths using the impedance property of LC-ladder filters. In this paper, we present a systematic method to design wideband low-noise amplifiers. An SiGe amplifier with on-chip matching network spanning 3-10 GHz delivers 21-dB peak gain, 2.5-dB noise figure, and -1-dBm input IP3 at 5 GHz, with a 10-mA bias current.

Keywords

Ge-Si alloys; integrated circuit design; ladder networks; low-power electronics; matched filters; semiconductor device noise; ultra wideband communication; wideband amplifiers; 10 mA; 2.5 dB; 21 dB; 3 to 10 GHz; IP3; LC-ladder filters; SiGe; SiGe amplifier; amplifier noise; impedance property; integrated circuit design; low-noise amplifier; noise figure; on-chip matching; reactive matching; wideband LC-ladder matching network; Bandwidth; Broadband amplifiers; Design methodology; Germanium silicon alloys; Impedance; Low-noise amplifiers; Matched filters; Network-on-a-chip; Noise figure; Silicon germanium; 65; Amplifier noise; LNA; NF; SiGe amplifier; UWB; low-noise amplifier; noise figure; ultrawideband; wideband matching;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.836344

Filename

1362835