Title :
A fully matched N-way Doherty amplifier with optimized linearity
Author :
Yang, Youngoo ; Cha, Jeonghyeon ; Shin, Bumjae ; Kim, Bumman
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
fDate :
3/1/2003 12:00:00 AM
Abstract :
This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested using down-link WCDMA signal. The linearity performances of the two-, three-, and four-way Doherty amplifiers are optimized for better efficiency versus linearity by a bias adjustment of the peaking amplifiers. For simultaneously improving the efficiency and linearity to achieve maximum efficiency versus linearity, the gate biases of the peaking amplifiers for the N-way Doherty amplifier are optimized. As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier.
Keywords :
MOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; adjacent channel interference; circuit optimisation; code division multiple access; 2.14 GHz; LDMOSFETs; N-way Doherty amplifier; adjacent channel leakage ratio; bias adjustment; down-link WCDMA signal; fully matched amplifier; gate biases; linearity performances; optimized linearity; peaking amplifiers; Base stations; Circuits; Costs; Degradation; High power amplifiers; Linearity; Microwave amplifiers; Multiaccess communication; Power amplifiers; Power generation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2003.808713
