A fully matched N-way Doherty amplifier with optimized linearity

Author

Yang, Youngoo ; Cha, Jeonghyeon ; Shin, Bumjae ; Kim, Bumman

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea

Volume

51

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

986

Lastpage

993

Abstract

This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested using down-link WCDMA signal. The linearity performances of the two-, three-, and four-way Doherty amplifiers are optimized for better efficiency versus linearity by a bias adjustment of the peaking amplifiers. For simultaneously improving the efficiency and linearity to achieve maximum efficiency versus linearity, the gate biases of the peaking amplifiers for the N-way Doherty amplifier are optimized. As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier.

Keywords

MOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; adjacent channel interference; circuit optimisation; code division multiple access; 2.14 GHz; LDMOSFETs; N-way Doherty amplifier; adjacent channel leakage ratio; bias adjustment; down-link WCDMA signal; fully matched amplifier; gate biases; linearity performances; optimized linearity; peaking amplifiers; Base stations; Circuits; Costs; Degradation; High power amplifiers; Linearity; Microwave amplifiers; Multiaccess communication; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2003.808713

Filename

1191758