DocumentCode
1172688
Title
New circuit model for RF probe pads and interconnections for the extraction of HBT equivalent circuits
Author
Lee, Seonghearn ; Gopinath, Anand
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
12
Issue
10
fYear
1991
Firstpage
521
Lastpage
523
Abstract
A new circuit model for RF probe pads and interconnections is proposed, and this model and previous models are compared with measured S parameters of probe pad and interconnection test structures. A modified parameter and interconnnection model was used to determine an HBT equivalent circuit. Excellent agreement is obtained between the extracted equivalent circuit and measured HBT S parameters, while providing physically acceptable parameter values.<>
Keywords
S-parameters; equivalent circuits; heterojunction bipolar transistors; probes; semiconductor device models; solid-state microwave devices; HBT; RF probe pads; S parameters; circuit model; equivalent circuits; interconnection test structures; interconnections; Atherosclerosis; Circuit testing; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit interconnections; Parameter extraction; Probes; Prototypes; Radio frequency; Scattering parameters;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.119176
Filename
119176
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