A variable-work-function polycrystalline-Si/sub 1-x/Ge/sub x/ gate material for submicrometer CMOS technologies

Author

King, Tsu-Jae ; Pfiester, James R. ; Saraswat, Krishna C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

12

Issue

10

fYear

1991

Firstpage

533

Lastpage

535

Abstract

P/sup +/ poly-Si/sub 1-x/Ge/sub x/ is a promising candidate for the gate material in submicrometer CMOS technologies due to its improved resistivity and its work function (which can be modified to achieve more-scalable NMOS and PMOS devices). The work function of P/sup +/ poly-Si/sub 1-x/Ge/sub x/ decreases with increasing Ge content, by more than 0.3 V from 0 to 60%. Because of its ease of formation and compatibility with VLSI fabrication techniques, assimilating poly-Si/sub 1-x/Ge/sub x/ into an existing CMOS process should be relatively simple.<>

Keywords

CMOS integrated circuits; Ge-Si alloys; VLSI; semiconductor materials; P/sup +/ poly-Si/sub 1-x/Ge/sub x/; VLSI fabrication techniques; compatibility; ease of formation; gate material; polycrystalline Si/sub 1-x/Ge/sub x/; resistivity; scaling; semiconductors; submicron CMOS technologies; variable-work-function; Boron; CMOS technology; Conductivity; Fabrication; Implants; MOS devices; Rapid thermal annealing; Semiconductor films; Sheet materials; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119180

Filename

119180